A desktop extreme ultraviolet microscope based on a compact laser-plasma light source

A compact, desktop size microscope, based on laser-plasma source and equipped with reflective condenser and diffractive Fresnel zone plate objective, operating in the extreme ultraviolet (EUV) region at the wavelength of 13.8 nm, was developed. The microscope is capable of capturing magnified images of objects with 95-nm full-pitch spatial resolution (48 nm 25–75% KE) and exposure time as low as a few seconds, combining reasonable acquisition conditions with stand-alone desktop footprint. Such EUV microscope can be regarded as a complementary imaging tool to already existing, well-established ones. Details about the microscope, characterization, resolution estimation and real sample images are presented and discussed

Volume extreme ultraviolet holographic imaging with numerical optical sectioning

Includes bibliographical references (pages 10622-10623).Three dimensional images were obtained using a single high numerical aperture hologram recorded in a high resolution photoresist with a table top λ = 46.9 nm laser. Gabor holograms were numerically reconstructed over a range of image planes by sweeping the propagation distance in the numerical reconstruction algorithm, allowing numerical optical sectioning. A robust three dimension image of a test object was obtained with numerical optical sectioning, providing a longitudinal resolution of approximately 2 μm and a lateral resolution of 164 nm

Sub 400 nm spatial resolution extreme ultraviolet holography with a table top laser

Includes bibliographical references (pages 9636-9637).We report sub-400 nm spatial resolution with Gabor holography obtained using a highly coherent table top 46.9 nm laser. The hologram was recorded in high resolution photoresist and subsequently digitized with an atomic force microscope. The final image was numerically reconstructed with a Fresnel propagator. Optimal reconstruction parameters and quantification of spatial resolution were obtained with a wavelet analysis and image correlation

Table top nanopatterning with extreme ultraviolet laser illumination

Includes bibliographical references (pages 723-724).Patterning with extreme ultraviolet light generated by a compact, bright laser source operating at a wavelength of 46.9 nm is demonstrated using two complementary approaches: multiple beam interferometric lithography and de-magnifying projection. Features with sizes ranging from 370 nm to 60 nm were printed in a few seconds in poly-methyl methacrylate resist. These proof-of-principle experiments demonstrate practical table-top nanopatterning tools based on extreme ultraviolet lasers for nanotechnology applications

Advances in full field microscopy with table-top soft x-ray lasers

We describe recent advances in the demonstration of table-top full field microscopes that use soft x-ray lasers for illumination. We have achieved wavelength resolution and single shot exposure operation with a very compact 46.9 nm microscope based on a desk-top size capillary discharge laser. This {lambda}-46.9 nm microscope has been used to capture full field images of a variety of nanostructure systems and surfaces. In a separate development we have demonstrated a zone plate microscope that uses {lambda}=13.2 nm laser illumination to image absorption defects in an extreme ultraviolet lithography (EUVL) mask in the same geometry used in a 4x demagnification EUVL stepper. Characterization of the microscope’s transfer function shows it can resolve 55 nm half period patterns. With these capabilities, the {lambda}-13.2 nm microscope is well suited for evaluation of pattern and defect printability of EUVL masks for the 22 nm node

Roadmap on holography

From its inception holography has proven an extremely productive and attractive area of research. While specific technical applications give rise to 'hot topics', and three-dimensional (3D) visualisation comes in and out of fashion, the core principals involved continue to lead to exciting innovations in a wide range of areas. We humbly submit that it is impossible, in any journal document of this type, to fully reflect current and potential activity; however, our valiant contributors have produced a series of documents that go no small way to neatly capture progress across a wide range of core activities. As editors we have attempted to spread our net wide in order to illustrate the breadth of international activity. In relation to this we believe we have been at least partially successful

SiC detectors for evaluation of laser–plasma dynamics employing gas-puff targets

An Nd:YAG pulsed laser was employed to irradiate different gas-puff targets. The interaction gives rise to the emission of soft X-ray (SXR), ultraviolet and extreme ultraviolet (EUV) radiation useful for X-ray microscopy. A Silicon Carbide (SiC) and a Si detector were employed to characterize the photon plasma emission of different gases in different wavelength ranges. The EUV and SXR measurements with different filters show the applicability of SiC detectors for plasma monitoring and characterization. Detector linearity, plasma evolution over the time and the relative intensity signal of both detectors will be presented and discussed

Silicon carbide detectors for diagnostics of laser-produced plasmas

Recently developed silicon carbide (SiC) detectors have been employed to study pulsed laser plasmas produced by irradiation of a double-stream gas puff target with nanosecond laser pulses. The plasma emitted by a gas-puff target source in the soft X-ray (SXR, λ = 0.1 - 10 nm) and extreme ultraviolet (EUV, λ = 10 - 120 nm) ranges was monitored with silicon carbide (SiC) detectors and compared with a commercial, calibrated silicon (Si) photodiode (AXUV-HS1). Different filters have been used to select the emission in different wavelength ranges from the broad-band emission of the plasma. This work shows the applicability of SiC detectors to measure the SXR and EUV ns pulses from the plasma, useful for monitoring and optimizing the gas-puff laser-plasma sources developed at IOE-MUT, in Warsaw (Poland). Some aspects relative to the plasma stability as well as characterization of the plasma source (i.e. the overall evaluation of the signal and the time trace profile) will be presented and discussed